PART |
Description |
Maker |
NTB35N15 NTB35N15T4 NTB35N15-D |
Power MOSFET 37 Amps, 150 Volts N-Channel Enhancement-Mode D2PAK
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ON Semiconductor
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NTF6P02T3 NTF6P02T3-D NTF6P02T3G NTF6P02T3/D |
Receptacle With A Wire Wrap Tail NTF6P02T3 Power MOSFET -6.0 Amps, -20 Volts P?Channel SOT23(-6.0A,-20V,P通道,SOT-23封装的功率MOSFET) 10 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261AA Power MOSFET -6.0 Amps, -20 Volts P??annel SOT?23 Power MOSFET -6.0 Amps, -20 Volts P-Channel SOT-223 20V P-ch HD3e SOT223
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ONSEMI ON Semiconductor
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RM912 |
CDMA/AMPS 3-4 Volt Power Amplifier (824-849 MHz) CDMA/AMPS 3-4 Volt Power Amplifier (824849 MHz)
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Conexant Systems, Inc.
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NTMS4P01R2 NTMS4P01R2/D NTMS4P01R2-D |
Power MOSFET -4.5 Amps, -12 Volts P-Channel Enhancement-Mode Single SO-8 Package Receptacle With A Standard Tail Power MOSFET -4.5 Amps-12 Volts
|
ON Semiconductor
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RFT3055 RFT3055LE HGTG20N120CND FN4537 |
2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET 2.0安培0V的,0.150 Ohm的N通道,逻辑层次,额定静电,功率MOSFET 2.0A/ 60V/ 0.150 Ohm/ N-Channel/ Logic Level/ ESD Rated/ Power MOSFET 63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 2.0A 60V 0.150 Ohm N-Channel Logic Level ESD Rated Power MOSFET From old datasheet system
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Fairchild Semiconductor, Corp. INTERSIL[Intersil Corporation]
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NTMD3P03R2-D NTMD3P03R2 NTMD3P03R2/D |
Power MOSFET -3.05 Amps-30 Volts Power MOSFET -3.05 Amps, -30 Volts Dual P?Channel SO(-3.05 A, -30 V,双P通道,SO-8封装的功率MOSFET) Power MOSFET -3.05 Amps, -30 Volts Dual P-Channel SO-8
|
ON Semiconductor
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NTMD2P01R2 NTMD2P01R2-D |
Power MOSFET -2.3 Amps, -16 Volts Dual SO-8 Package Power MOSFET -2.3 Amps, -16 Volts Dual SO Package(-2.3A16V,双通道SO-8封装的功率MOSFET) 2.3 A, 16 V, 0.1 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
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NTD18N06LT4G NTD18N06 NTD18N06L NTD18N06L-1 NTD18N |
Power MOSFET 18 A, 60 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOSFET 18 Amps, 60 Volts, Logic Level N-Channel DPAK
|
ONSEMI[ON Semiconductor]
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FDB2572 FDP2572 FDB2572NL |
N-Channel PowerTrench MOSFET 150V, 29A, 54mз 4 A, 150 V, 0.054 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 150V N-Channel UltraFET Trench MOSFET 29A, 0.056 Ohms @ VGS = 10V, TO-263/D2PAK Package 4 A, 150 V, 0.054 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB N-Channel PowerTrench MOSFET 150V/ 29A/ 54m N-Channel PowerTrench MOSFET 150V, 29A, 54m蟹 N-Channel PowerTrench MOSFET 150V, 29A, 54m?/a>
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Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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S29GL064M90FBIR00 S29GL064M90FCIR02 S29GL064M90FCI |
MOSFET, Switching; VDSS (V): 300; ID (A): 88; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.042; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5000; toff (µs) typ: -; Package: TO-3P MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 90; RDS (ON) typ. (ohm) @10V: 0.0046; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2500; toff (µs) typ: 0.07; Package: TO-220AB MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (S)- (2) MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (L) MOSFET, Switching; VDSS (V): 150; ID (A): 70; Pch : -; RDS (ON) typ. (ohm) @10V: 0.022; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5100; toff (µs) typ: -; Package: TO-3P MOSFET, Switching; VDSS (V): 200; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.036; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN MOSFET, Switching; VDSS (V): 200; ID (A): 96; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4900; toff (µs) typ: 0.22; Package: TO-3P MOSFET, Switching; VDSS (V): 290; ID (A): 18; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.07; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN MOSFET, Switching; VDSS (V): 230; ID (A): 35; Pch : -; RDS (ON) typ. (ohm) @10V: 0.03; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5200; toff (µs) typ: -; Package: TO-3PFM MOSFET, Switching; VDSS (V): 300; ID (A): 40; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.058; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5150; toff (µs) typ: 0.22; Package: TO-3P 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 3.0伏只页面模式闪存具有0.23微米工艺技术的MirrorBit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PBGA64 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 16M X 16 FLASH 3V PROM, 100 ns, PDSO56 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 16 FLASH 3V PROM, 90 ns, PDSO56 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 8 FLASH 3V PROM, 90 ns, PBGA63 MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.008; RDS (ON) typ. (ohm) @4V[4.5V]: 0.013 (5V); RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1400; toff (µs) typ: 0.055; Package: LDPAK (L)
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Spansion Inc. Spansion, Inc. SPANSION LLC
|
MTD4N20E MTD4N20ET4 MTD4N20E-1 |
N?Channel DPAK Power MOSFET OBSOLETE - Power MOSFET 4 Amps, 200 Volts
|
ON Semiconductor
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